Vidwan-ID : 55403



  • Dr Brinda  Bhowmick 

  • Professor
  • National Institute of Technology, Silchar
Publications 2009 - 2023

Publications

  • 117
    Journal Articles
  • 8
    Book Chapter
  • 25
    Conference
    Proceedings
  • 2
    Review
  • 1
    Inproceedings
  • 1
    Projects
  • 2
  • 1
  • 2
  • 37

Citations / H-Index

1211 Citations
18 h-index
838 Citations

Google Scholar

Co-author Network


Expertise

Electrical and Electronic Engineering

Semiconductor Devices Physics, Modeling and Simulation of low power and high power semiconductor devices, analog circuits, sensors

Personal Information

Dr Brinda  Bhowmick 

Female
Ece Deptt. National Institute of Technology Silchar
Silchar, Assam, India - 788010


Experience

  • Professor

    Department of Electronics and Communication Engineering

    National Institute of Technology, Silchar


Qualification

  • Ph.D


Honours and Awards

2018

Visvesvararya Young Faculty Research Fellowship

MeitY Govt of India

2018

Visvesvararya Young Faculty Research Fellowship

MeitY Govt of India

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Doctoral Theses Guided

2022

Performance Assessment of Vertical Tunnel FETs: from Theory to Sensing Applications

W. Vandana Devi, NITS

2022

Simulation and Performance Analysis of Lateral and Vertical Tunnel FETs and their Biosensor Applications

K Vanlalawmpuia, NITS

2022

Simulation and Modelling of Gate-Engineered Tunnel FET

Basab Das, NITS

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2022

Performance Assessment of Vertical Tunnel FETs: from Theory to Sensing Applications

W. Vandana Devi, NITS

2022

Simulation and Performance Analysis of Lateral and Vertical Tunnel FETs and their Biosensor Applications

K Vanlalawmpuia, NITS

2022

Simulation and Modelling of Gate-Engineered Tunnel FET

Basab Das, NITS

2021

Bandgap Engineered Selective Buried Oxide Tunnel FETs: simulation, modeling and applications

Puja Ghosh, NITS

2019

Thesis Title;Simulation, Modeling and Reliability issues of Gate-on-Source/Channel SOI TFET with Back Gate

Suman Kumar Mitra, NITS

2018

Modeling and Simulation of Electrical Parameters in FINFET Structures and the Effects of Statistical Variability of Metal Gate Workfunction

Rajesh Saha, NITS

2018

Modeling, Simulation and Optimization of Hetero Junction Schottky Barrier FET and RF/linearity Performances for Low Power applications

B Prashanth Kumar, NITS

2017

Gate Engineered and Bandgap Engineered TFETs: simulation, modeling and application

Rupam Goswami, NIT S

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Membership In Professional Bodies

2018

IET

Member

2011

IEEE

Member

2018

IET

Member

2011

IEEE

Member

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Research Projects

Hetero-Junction Tunnel FETs: Characterization, Modelling and Simulation of Electrical parameters,

Funding Agency : CSIR

Hetero-Junction Tunnel FETs: Characterization, Modelling and Simulation of Electrical parameters,

Funding Agency : CSIR

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Patents





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